Product Summary
The HFA25TB60S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tbportion of recovery.
Parametrics
HFA25TB60S absolute maximum ratings: (1)Cathode-to-Anode Voltage, VR: 600 V; (2)Continuous Forward Current, IF@ TC= 100℃: 25A; (3)Single Pulse Forward Current, IFSM: 225 A; (4)Maximum Repetitive Forward Current, IFRM: 100A; (5)Maximum Power Dissipation, PD@ TC= 25℃: 125W; (6)Maximum Power Dissipation, PD@ TC= 100℃: 50W; (7)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃.
Features
HFA25TB60S features: (1)Ultrafast Recovery; (2)Ultrasoft Recovery; (3)Very Low IRRM; (4)Very Low Qrr; (5)Specified at Operating Conditions.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
---|---|---|---|---|---|---|---|---|---|---|
HFA25TB60S |
Vishay Semiconductors |
Rectifiers 600 Volt 25 Amp |
Data Sheet |
Negotiable |
|
|||||
HFA25TB60SPbF |
Other |
Data Sheet |
Negotiable |
|
||||||
HFA25TB60STRL |
Vishay Semiconductors |
Rectifiers 600 Volt 25 Amp |
Data Sheet |
Negotiable |
|