Product Summary
The IXTH220N055T is an N-Channel Enhancement Mode Avalanche Rated Power MOSFET. The applications of the IXTH220N055T include Automotive Motor Drives, High Side Switch, 12V Battery, ABS Systems, DC/DC Converters and Off-line UPS, Primary- Side Switch, High Current Switching.
Parametrics
IXTH220N055T absolute maximum ratings: (1)TJ = 25℃ to 175℃, VDSS: 55V; (2)TJ = 25℃ to 175; RGS = 1 M, VDGR: 55 V; (3)Transient, VGSM: ±20 V; (4)TC = 25℃, ID25: 220 A; Lead Current Limit, RMS, ILRMS: 75 A; TC = 25℃, pulse width limited by TJM, IDM: 600 A; (5)TC = 25℃, IAR: 25A; TC = 25℃, EAS: 1.0 J; (6)IS ≤ IDM, di/dt ≤100 A/μs, VDD ≤ VDSS, dv/dt: 3 V/ns; (7)TC = 25℃, PD: 430 W; (8)TJ: -55 to +175℃; (9)TJM: 175℃; (10)Tstg: -55 to +175℃.
Features
IXTH220N055T features: (1)Ultra-low On Resistance; (2)Unclamped Inductive Switching (UIS) rated; (3)Low package inductance - easy to drive and to protect; (4)175℃ Operating Temperature.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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IXTH220N055T |
Ixys |
MOSFET 220 Amps 55V 3.6 Rds |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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Other |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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IXTH02N250 |
Ixys |
MOSFET High Voltage Power MOSFET; 2500V, 0.2A |
Data Sheet |
Negotiable |
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