Product Summary

The K6T0808C10-GB70 is a 32Kx8 bit Low Power CMOS Static RAM. The K6T0808C10-GB70 is fabricated by SAMSUNG’s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The device also supports low data retention voltage for battery backup operation with low data retention current.

Parametrics

K6T0808C10-GB70 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to 7.0 V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.5 to 7.0 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃; (6)Soldering temperature and time, TSOLDER: 260℃, 10sec (Lead Only).

Features

K6T0808C10-GB70 features: (1)Process Technology: TFT; (2)Organization: 32Kx8; (3)Power Supply Voltage: 4.5 to 5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4 F/R.

Diagrams

MC68HC000EI20 block diagram

K6T0808C1D
K6T0808C1D
Other

Data Sheet
Negotiable