XCV1000E-6FG860C

XCV1000E-6FG860C, Field Programmable Gate Array, BGA, 4V, Xilinx, Inc

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PartNumber:: XCV1000E-6FG860C

Brand:: Xilinx, Inc - Xilinx | Pack: BGA | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-07-24

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Product Summary

The XCV1000E-6FG860C is a Field Programmable Gate Array. The XCV1000E-6FG860C delivers high-performance, high-capacity programmable logic solutions. Dramatic increases in silicon efficiency result from optimizing the new architecture for place-and-route efficiency and exploiting an aggressive 6-layer metal 0.18 μm CMOS process. These advances make XCV1000E-6FG860C powerful and flexible alternatives to mask-programmed gate arrays.

Parametrics

XCV1000E-6FG860C absolute maximum ratings: (1)VCCINT Internal Supply voltage relative to GND: –0.5 to 2.0 V; (2)VCCO Supply voltage relative to GND: –0.5 to 4.0 V; (3)VREF Input Reference Voltage: –0.5 to 4.0 V; (4)VIN Input voltage relative to GND: –0.5 to 4.0 V; (5)VTS Voltage applied to 3-state output: –0.5 to 4.0 V; (6)VCC Longest Supply Voltage Rise Time from 0 V - 1.71 V: 50 ms; (7)TSTG Storage temperature (ambient:) –65 to +150 ℃; (8)TJ Junction temperature Plastic packages: +125 ℃.

Features

XCV1000E-6FG860C features: (1)Fast, High-Density 1.8 V FPGA Family: Densities from 58 k to 4 M system gates; 130 MHz internal performance (four LUT levels); Designed for low-power operation; PCI compliant 3.3 V, 32/64-bit, 33/ 66-MHz; (2)SRAM-Based In-System Configuration: Unlimited re-programmability; (3)Advanced Packaging Options: 0.8 mm Chip-scale; 1.0 mm BGA; 1.27mm BGA; HQ/PQ; (4)0.18mm 6-Layer Metal Process; (5)100% Factory Tested.