(China (Mainland))
Product Summary
The QM30TB1-H is a mitsubishi transistor module. The applications of the QM30TB1-H include AC motor controllers, DC motor controllers, NC equipment.
Parametrics
QM30TB1-H absolute maximum ratings: (1)Collector-emitter voltage, VCEX (SUS): 1000V; (2)Collector-emitter voltage, VCEX: 1000V; (3)Collector-base voltage, VCBO: 1000V; (4)Emitter-base voltage, VEBO: 7V; (5)Collector current, IC: 30A; (6)Collector reverse current, -IC: 30A; (7)Collector dissipation, PC: 310W; (8)Base current, IB: 2A; (9)Surge collector reverse current (forward diode current), -ICSM: 300A; (10)Junction temperature, Tj: -40 TO +150℃; (11)Storage temperature, Tstg: -40 TO +125℃; (12)Isolation voltage, Viso: 2500V.
Features
QM30TB1-H features: (1)IC Collector current: 30A; (2)VCEX Collector-emitter voltage: 1000V; (3)hFE DC current gain: 75; (4)Insulated Type; (5)UL Recognized, Yellow Card No. E80276 (N); File No. E80271.
Diagrams
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